? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c40 v v dgr t j = 25 c to 175 c, r gs = 1m 40 v v gsm transient 20 v i d25 t c = 25 c 300 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 900 a i a t c = 25 c 100 a e as t c = 25 c 600 mj p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c weight 3 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 40 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 150 a r ds(on) v gs = 10v, i d = 50a, notes 1, 2 2.5 m trench t2 tm power mosfet n-channel enhancement mode avalanche rated ixta300 n04t2-7 v dss = 40v i d25 = 300a r ds(on) 2.5m ds100072(11/08) preliminary technical information features z international standard package z 175 c operating temperature z avalanche rated z high current handling capability z low r ds(on) advantages z easy to mount z space savings z high power density applications ? synchronous buck converters ? high current switching power supplies ? battery powered electric motors ? resonant-mode power supplies ? electronics ballast application ? class d audio amplifiers to-263 (7-lead) pins: 1 - gate 2, 3 - source 5,6,7 - source tab (8) - drain 1 7 (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA300N04T2-7 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 94 s c iss 10.7 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1630 pf c rss 263 pf t d(on) 22 ns t r 17 ns t d(off) 32 ns t f 13 ns q g(on) 145 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 44 nc q gd 36 nc r thjc 0.31 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 300 a i sm repetitive, pulse width limited by t jm 1000 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 53 ns i rm 1.8 a q rm 47.7 nc notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 2 (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 20v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. pins: 1 - gate 2, 3 - source 4 - drain 5,6,7 - source tab (8) - drain to-263 (7-lead) (ixta..7) outline
? 2008 ixys corporation, all rights reserved IXTA300N04T2-7 fig. 1. output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 300 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 150oc 0 25 50 75 100 125 150 175 200 225 250 275 300 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 150a value vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 300a i d = 150a fig. 5. r ds(on) normalized to i d = 150a value vs. drain current 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 200 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTA300N04T2-7 ixys ref: t_300n04t2(v6)11-10-08-a fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v gs - volts v ds = 20v i d = 150a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 100s 10ms 100ms r ds( on ) limit dc external lead current limit
? 2008 ixys corporation, all rights reserved IXTA300N04T2-7 fig. 14. resistive turn-on rise time vs. drain current 10 15 20 25 30 35 40 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds r g = 2 ? v gs = 10v v ds = 20v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 2 4 6 8 10 12 14 16 r g - ohms t r - nanoseconds 15 25 35 45 55 65 75 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 200a, 100a fig. 16. resistive turn-off switching times vs. junction temperature 5 10 15 20 25 30 35 40 45 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 15 20 25 30 35 40 45 50 55 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 8 12 16 20 24 28 32 36 40 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 20 25 30 35 40 45 50 55 60 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 20v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 14 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 25 50 75 100 125 150 175 200 225 250 2 4 6 8 10121416 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 100a, 200a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA300N04T2-7 ixys ref: t_300n04t2(v6)11-10-08-a fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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